PART |
Description |
Maker |
IR26-51C IR26-51C_L110_TR8 IR26-51C/L110/TR8 IR26- |
1 ELEMENT, INFRARED LED, 940 nm 1.6mm round Subminiature Side Looking Infrared LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD Everlight Electronics Co., Ltd
|
TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter Infrared LED GaA??s Infrared Emitter Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation Toshiba Semiconductor
|
BIR-BO731 BIR-NL7C1 BIR-BM734 BIR-BL734 |
3 mm, 1 ELEMENT, INFRARED LED, 840 nm 5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|